Semiconductor laser design with an asymmetric large optical cavity waveguide and a bulk active layer near p-cladding for efficient high-power red light emission

Abstract A semiconductor laser design for efficient, high power, brightness red light emission is proposed, using a large optical cavity asymmetric waveguide and bulk active layer (AL) positioned very close to the p -cladding. The low threshold carrier density associated with broad AL, as well proximity of AL -cladding, ensure that electron leakage current, major detrimental factor in lasers, stays modest range excitation levels. This turn promises high-power, efficient operation.